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| TSD2444 Low Vcesat NPN Transistor SOT-23 Pin Definition: 1. Base 2. Emitter 3. Collector PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) 40V 25V 800mA 40mV @ IC / IB = 50 / 2.5mA Features Low VCE(SAT) Excellent DC Current Gain Characteristics Ordering Information Part No. TSD2444CX RF Package SOT-23 Packing 3Kpcs / 7" Reel Structure Epitaxial Planar Type Complementary to TSB1590CX Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot TJ TSTG Limit 40 25 6 800 225 +150 - 55 to +150 Unit V V V mA mW o C o C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter on Voltage DC Current Transfer Ratio Conditions IC = 100uA, IE = 0 IC = 2mA, IB = 0 IE = 100uA, IC = 0 VCB = 30V, IE = 0 VEB = 6V, IC = 0 IC = 50mA, IB = 2.5mA IC = 400mA, IB = 20mA IC = 800mA, IB = 80mA VCE = 1V, IC = 10mA VCE = 1V, IC = 100mA VCE = 1V, IC = 600mA Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) 1 *VCE(SAT) 2 *VCE(SAT) 3 VBE(ON) hFE 1 hFE 2 fT Cob Min 40 25 6 -----180 40 --- Typ -----0.04 0.15 0.25 ---150 15 Max ---0.5 0.5 0.06 0.3 0.6 1.0 560 ---- Unit V V V uA uA V V Transition Frequency VCE = 5V, IC=-100mA Output Capacitance VCB = 10V, f=1MHz * Pulse Test: Pulse width 380us, Duty cycle 2% MHz pF 1/4 Version: A08 TSD2444 Low Vcesat NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Collector Current Figure 3. VBE(SAT) v.s. Collector Current Figure 4. Power Derating Curve Figure 5. Cutoff Frequency v.s. Collector Current 2/4 Version: A08 TSD2444 Low Vcesat NPN Transistor SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5 10 5 10 3/4 Version: A08 TSD2444 Low Vcesat NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A08 |
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